Towards 11 nm half-pitch Resolution for a Negative-tone Chemically Amplified Molecular Resist Platform for EUV Lithography

We have synthesized a new resist molecule and investigated its high-resolution capability. The material showed resolved line-spaces with 14 nm half-pitch (hp) and the potential to pattern 11 nm hp features. Line edge roughness values as low as 3.15 nm were seen in optimized formulations. The dose-to-size is estimated at around 20-30 mJ/cm2. The role of the molecule in the patterning process was studied by comparing it with structurally similar compounds. Furthermore we present first results from exposures of our materials at the Berkeley Micro Exposure Tool. Finally it is also demonstrated that the material works as a resist in 100 kV electron beam lithography as well.