Kundrotas, J, Cerskus, A, Valusis, G et al. (3 more authors) (2015) Excitonic light emission decay time measurements in moderately δ-doped GaAs/AlAs multiple quantum wells. Lithuanian Journal of Physics, 55 (4). pp. 264-273. ISSN 1648-8504
Abstract
The radiative recombination rate of moderately doped n-type and p-type GaAs/AlAs multiple quantum wells using a timecorrelated single photon counting system is presented. The experimental study has been obtained within a wide temperature range from liquid helium to room temperature and the work has focused on identifying photoluminescence decay rates based on freeexciton recombinations. It was found that the free exciton decay time was reduced in doped multiple GaAs/AlAs quantum wells, and that the reduction rate depends on both the concentration and doping type.
Metadata
| Item Type: | Article |
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| Authors/Creators: |
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| Keywords: | quantum well; photoluminescence; lifetime |
| Dates: |
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| Institution: | The University of Leeds |
| Academic Units: | The University of Leeds > Faculty of Engineering & Physical Sciences (Leeds) > School of Electronic & Electrical Engineering (Leeds) > Pollard Institute (Leeds) |
| Depositing User: | Symplectic Publications |
| Date Deposited: | 25 May 2016 15:29 |
| Last Modified: | 25 May 2016 23:00 |
| Published Version: | https://dx.doi.org/10.3952/physics.v55i4.3222 |
| Status: | Published |
| Identification Number: | 10.3952/physics.v55i4.3222 |
| Related URLs: | |
| Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:97975 |
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