Mowbray, D.J. and Orchard, J.R. (2016) Analysing radiative and non-radiative recombination in InAs QDs on Si for integrated laser applications. In: SPIE Proceedings. Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XIII, February 13, 2016, San Francisco, California, United States. SPIE
Abstract
Three InAs quantum dot (QD) samples with dislocation filter layers (DFLs) are grown on Si substrates with and without in-situ annealing. Comparison is made to a similar structure grown on a GaAs substrate. The three Si grown samples have different dislocation densities in their active region as revealed by structural studies. By determining the integrated emission as a function of laser power it is possible to determine the power dependence of the radiative efficiency and compare this across the four samples. The radiative efficiency increases with decreasing dislocation density; this also results in a decrease in the temperature quenching of the PL. A laser structures grown on Si and implementing the same optimum DFL and annealing procedure exhibits a greater than 3 fold reduction in threshold current as well as a two fold increase in slope efficiency in comparison to a device in which no annealing is applied. © (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Metadata
Item Type: | Proceedings Paper |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | Copyright 2016 Society of Photo-Optical Instrumentation Engineers. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited. |
Dates: |
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Institution: | The University of Sheffield |
Academic Units: | The University of Sheffield > Faculty of Science (Sheffield) > Department of Physics and Astronomy (Sheffield) |
Funding Information: | Funder Grant number ENGINEERING AND PHYSICAL SCIENCE RESEARCH COUNCIL (EPSRC) EP/J012882/1 |
Depositing User: | Symplectic Sheffield |
Date Deposited: | 26 Apr 2016 14:36 |
Last Modified: | 24 Mar 2018 16:27 |
Published Version: | http://dx.doi.org/10.1117/12.2209693 |
Status: | Published |
Publisher: | SPIE |
Refereed: | Yes |
Identification Number: | 10.1117/12.2209693 |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:97878 |