Orchard, J.R., Shutts, S., Sobiesierski, A. et al. (9 more authors) (2016) In situ annealing enhancement of the optical properties and laser device performance of InAs quantum dots grown on Si substrates. Optics Express, 24 (6). p. 6196. ISSN 1094-4087
Abstract
The addition of elevated temperature steps (annealing) during the growth of InAs/GaAs quantum dot (QD) structures on Si substrates results in significant improvements in their structural and optical properties and laser device performance. This is shown to result from an increased efficacy of the dislocation filter layers (DFLs); reducing the density of dislocations that arise at the Si/III-V interface which reach the active region. The addition of two annealing steps gives a greater than three reduction in the room temperature threshold current of a 1.3 μm emitting QD laser on Si. The active region of structures grown on Si have a room temperature residual tensile strain of 0.17%, consistent with cool down from the growth temperature and the different Si and GaAs thermal expansion coefficients. This strain limits the amount of III-V material that can be grown before relaxation occurs.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | © 2016 Optical Society of America. |
Dates: |
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Institution: | The University of Sheffield |
Academic Units: | The University of Sheffield > Faculty of Science (Sheffield) > Department of Physics and Astronomy (Sheffield) |
Funding Information: | Funder Grant number ENGINEERING AND PHYSICAL SCIENCE RESEARCH COUNCIL (EPSRC) EP/J012882/1 |
Depositing User: | Symplectic Sheffield |
Date Deposited: | 17 May 2016 14:05 |
Last Modified: | 03 Nov 2016 17:53 |
Published Version: | http://dx.doi.org/10.1364/OE.24.006196 |
Status: | Published |
Publisher: | Optical Society of America |
Refereed: | Yes |
Identification Number: | 10.1364/OE.24.006196 |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:97877 |