White, B.S., Sandall, I., Zhou, X. et al. (4 more authors) (2016) High-Gain InAs Planar Avalanche Photodiodes. Journal of Lightwave Technology, 34 (11). ISSN 0733-8724
Abstract
We report the fabrication of InAs planar avalanche photodiodes (APDs) using Be ion implantation. The planar APDs have a low background doping of $2 times 10^{14} {rm cm}^{-3}$ and large depletion widths approaching 8 μm. The thick depletion width enabled a gain of 330 to be achieved at −26 V at 200 K without inducing a significant tunneling current. No edge breakdown was observed within the APDs. The surface leakage current was found to be low with a gain normalized dark current density of 400 μAcm−2 at −20 V at 200 K.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | © 2016 IEEE. This is an open access article. |
Keywords: | Avalanche photodiodes; infrared detectors; ion implantation |
Dates: |
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Institution: | The University of Sheffield |
Academic Units: | The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield) |
Depositing User: | Symplectic Sheffield |
Date Deposited: | 17 May 2016 14:33 |
Last Modified: | 25 Aug 2020 06:27 |
Published Version: | http://dx.doi.org/10.1109/JLT.2016.2531278 |
Status: | Published |
Publisher: | Institute of Electrical and Electronics Engineers |
Refereed: | Yes |
Identification Number: | 10.1109/JLT.2016.2531278 |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:97725 |