Majid, M.A., Childs, D.T.D., Kennedy, K. et al. (5 more authors) (2011) O-band excited state quantum dot bilayer lasers. Applied Physics Letters , 99 (5). 051101. ISSN 0003-6951
Abstract
Bilayer InAs/GaAs quantum dot(QD) lasers operating in the excited state at wavelengths that span the O-band are demonstrated. The higher saturated gain and lower scattering time of the excited states of the ensemble of QDs offers the opportunity for fast direct-modulation lasers. We predict an increase in K-factor limited modulation bandwidth from QD lasers operating in the excited state due to a reduction in carrier transport and scattering times whilst maintaining high peak modal gain.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | © 2011 American Institute of Physics. Reproduced in accordance with the publisher's self-archiving policy. |
Dates: |
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Institution: | The University of Sheffield |
Academic Units: | The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield) |
Depositing User: | Symplectic Sheffield |
Date Deposited: | 20 Apr 2016 13:28 |
Last Modified: | 20 Apr 2016 13:28 |
Published Version: | http://dx.doi.org/10.1063/1.3605590 |
Status: | Published |
Publisher: | American Institute of Physics |
Refereed: | Yes |
Identification Number: | 10.1063/1.3605590 |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:97411 |