Harbord, E., Iwamoto, S., Arakawa, Y. et al. (3 more authors) (2012) Influence of p-doping on the temperature dependence of In As/GaAs quantum dot excited state radiative lifetime. Applied Physics Letters, 101. 183108. ISSN 0003-6951
Abstract
The radiative lifetime of the excited state transition of undoped and p-doped InAs/GaAs quantum dots(QDs) is estimated from measurements of time-integrated and time-resolved luminescence from both ground and excited states. The radiative lifetime of the undoped QDs increases from 500 ps at 10 K to almost 3 ns at room temperature, consistent with a Boltzmann redistribution of holes over the available energy states. The rate of increase can be suppressed by a factor of ∼2 by p-doping the QDs to maintain a hole population in the lowest confined dot states to high temperatures.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | © 2012 American Institute of Physics. Reproduced in accordance with the publisher's self-archiving policy. |
Dates: |
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Institution: | The University of Sheffield |
Academic Units: | The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield) |
Depositing User: | Symplectic Sheffield |
Date Deposited: | 26 Apr 2016 08:57 |
Last Modified: | 26 Apr 2016 09:00 |
Published Version: | http://dx.doi.org/10.1063/1.4765349 |
Status: | Published |
Publisher: | American Institute of Physics |
Refereed: | Yes |
Identification Number: | 10.1063/1.4765349 |
Related URLs: | |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:97405 |