Buca, D, Stange, D, Schulte-Braucks, C et al. (11 more authors) (2015) GeSn lasers for monolithic integration on Si. In: 2015 IEEE Summer Topicals Meeting Series, SUM 2015. Summer Topicals Meeting Series (SUM), 2015, 13-15 Jul 2015, Nassau, Bahamas. IEEE , pp. 57-58. ISBN 9781479974689
Abstract
Lasing under optical pumping is shown in suspended GeSn microdisks fabricated on a Ge virtual substrate with a lasing threshold below 1 mW at 20K.
Metadata
Item Type: | Proceedings Paper |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | (c) 2015 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works. |
Keywords: | Lasers, Tin, Photonics, Photonic band gap, Silicon, Optical resonators |
Dates: |
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Institution: | The University of Leeds |
Academic Units: | The University of Leeds > Faculty of Engineering & Physical Sciences (Leeds) > School of Electronic & Electrical Engineering (Leeds) > Pollard Institute (Leeds) |
Depositing User: | Symplectic Publications |
Date Deposited: | 11 Oct 2017 14:48 |
Last Modified: | 16 Jan 2018 08:52 |
Status: | Published |
Publisher: | IEEE |
Identification Number: | 10.1109/PHOSST.2015.7248191 |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:97146 |