von den Driesch, N, Stange, D, Wirths, S et al. (8 more authors) (2016) Direct bandgap GeSn light emitting diodes for short-wave infrared applications grown on Si. In: Proceedings of SPIE. SPIE Photonics West - OPTO, Silicon Photonics XI (Conference 9752), 15-17 Feb 2016, San Francisco, California, USA. Society of Photo-optical Instrumentation Engineers (SPIE)
Abstract
The experimental demonstration of fundamental direct bandgap, group IV GeSn alloys has constituted an important step towards realization of the last missing ingredient for electronic-photonic integrated circuits, i.e. the e cient group IV laser source. In this contribution, we present electroluminescence studies of reduced-pressure CVD grown, direct bandgap GeSn light emitting diodes (LEDs) with Sn contents up to 11 at.%. Besides homojunction GeSn LEDs, complex heterojunction structures, such as GeSn/Ge multi quantum wells (MQWs) have been studied. Structural and compositional investigations con rm high crystalline quality, abrupt interfaces and tailored strain of the grown structures. While also being suitable for light absorption applications, all devices show light emission in a narrow short-wave infrared (SWIR) range. Temperature dependent electroluminescence (EL) clearly indicates a fundamentally direct bandgap in the 11 at.% Sn sample, with room temperature emission at around 0.55 eV (2.25 m). We have, however, identi ed some limitations of the GeSn/Ge MQW approach regarding emission e ciency, which can be overcome by introducing SiGeSn ternary alloys as quantum con nement barriers.
Metadata
Item Type: | Proceedings Paper |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | Copyright 2016 Society of Photo Optical Instrumentation Engineers. This is an author produced version of a paper published in Proceedings of SPIE . Uploaded in accordance with the publisher's self-archiving policy. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited. |
Keywords: | GeSn, Direct bandgap, Optoelectronics, Light emitting diodes, Multi quantum wells, Silicon photonics |
Dates: |
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Institution: | The University of Leeds |
Academic Units: | The University of Leeds > Faculty of Engineering & Physical Sciences (Leeds) > School of Electronic & Electrical Engineering (Leeds) > Pollard Institute (Leeds) |
Funding Information: | Funder Grant number Royal Society IE131593 |
Depositing User: | Symplectic Publications |
Date Deposited: | 18 Oct 2016 10:56 |
Last Modified: | 17 Jan 2018 03:22 |
Published Version: | http://dx.doi.org/10.1117/12.2211641 |
Status: | Published |
Publisher: | Society of Photo-optical Instrumentation Engineers (SPIE) |
Identification Number: | 10.1117/12.2211641 |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:97061 |