InGaAs/InAlAs Avalanche Photodiode With Low Dark Current for High-Speed Operation
Xie, S., Zhang, S. and Tan, C.H.
(2015)
InGaAs/InAlAs Avalanche Photodiode With Low Dark Current for High-Speed Operation.
IEEE Photonics Technology Letters, 27 (16).
1745 - 1748.
ISSN 1041-1135
Abstract
Waveguide InGaAs/InAlAs avalanche photodiodes (APDs) with high bandwidths (>40 GHz) and low dark current (<;50 nA at 90% of breakdown voltage) were demonstrated. The excess noise is low, corresponding to k ~ 0.2 line in the local excess noise model. Using these values bit error rate (BER) was calculated to assess the potential of our APDs. Calculated sensitivities of -21.5 dBm at 25 Gb/s and -14.2 dBm at 40 Gb/s are predicted for a BER of 10-10. Analysis showed that with lower amplifier noise, the low dark current and low excess noise from our APDs are necessary to optimize the sensitivity.
Metadata
Item Type:
Article
Authors/Creators:
Xie, S.
Zhang, S.
Tan, C.H.
Copyright, Publisher and Additional Information:
This work is licensed under a Creative Commons Attribution 3.0 License. For more information, see http://creativecommons.org/licenses/by/3.0/
Keywords:
Avalanche photodiodes bandwidth; bit-error-rate; receiver sensitivity at 25 Gb/s
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