Meng, X., Zhou, X., Zhang, S. et al. (3 more authors) (2015) InAs avalanche photodiodes as X-ray detectors. Journal of Instrumentation, 10 (10). ISSN 1748-0221
Abstract
We designed and demonstrated an InAs avalanche photodiode (APD) for X-ray detection, combining narrow band gap semiconductor materials and avalanche gain from APDs. The InAs APD (cooled by liquid nitrogen) was tested with a 55Fe X-ray source. Full width at half maximum (FWHM) from the spectra decreases rapidly with reverse bias, rising again for higher voltages, resulting in a minimum FWHM value of 401 eV at 5.9 keV. This minimum value was achieved at 10 V reverse bias, which corresponds to an avalanche gain of 11. The dependence of FWHM on reverse bias observed is explained by the competition between various factors, such as leakage current, capacitance and avalanche gain from the APD, as well as measurement system noise. The minimum FWHM achieved is largely dominated by the measurement system noise and APD leakage current.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | Content from this work may be used under the terms of the Creative Commons Attribution 3.0 License (https://creativecommons.org/licenses/by/3.0/). Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI. |
Dates: |
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Institution: | The University of Sheffield |
Academic Units: | The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield) |
Depositing User: | Symplectic Sheffield |
Date Deposited: | 10 Dec 2015 18:37 |
Last Modified: | 10 Dec 2015 18:37 |
Published Version: | https://dx.doi.org/10.1088/1748-0221/10/10/P10030 |
Status: | Published |
Publisher: | IOP Publishing |
Refereed: | Yes |
Identification Number: | 10.1088/1748-0221/10/10/P10030 |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:92488 |