Grier, A, Valavanis, A, Edmunds, C et al. (8 more authors) (2015) Coherent vertical electron transport and interface roughness effects in AlGaN/GaN intersubband devices. Journal of Applied Physics, 118 (22). 224308. ISSN 0021-8979
Abstract
We investigate electron transport in epitaxially grown nitride-based resonant tunneling diodes (RTDs) and superlattice sequential tunneling devices. A density-matrix model is developed, and shown to reproduce the experimentally measured features of the current–voltage curves, with its dephasing terms calculated from semi-classical scattering rates. Lifetime broadening effects are shown to have a significant influence in the experimental data. Additionally, it is shown that the interface roughness geometry has a large effect on current magnitude, peak-to-valley ratios and misalignment features; in some cases eliminating negative differential resistance entirely in RTDs. Sequential tunneling device characteristics are dominated by a parasitic current that is most likely to be caused by dislocations; however, excellent agreement between the simulated and experimentally measured tunnelingcurrent magnitude and alignment bias is demonstrated. This analysis of the effects of scattering lifetimes, contact doping and growth quality on electron transport highlights critical optimization parameters for the development of III–nitride unipolar electronic and optoelectronic devices.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | © 2015 AIP Publishing LLC. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Journal of Applied Physics 118, 224308 (2015) and may be found at http://dx.doi.org/10.1063/1.4936962. Reproduced in accordance with the publisher's self-archiving policy. |
Dates: |
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Institution: | The University of Leeds |
Academic Units: | The University of Leeds > Faculty of Engineering & Physical Sciences (Leeds) > School of Electronic & Electrical Engineering (Leeds) > Pollard Institute (Leeds) |
Depositing User: | Symplectic Publications |
Date Deposited: | 01 Dec 2015 14:11 |
Last Modified: | 18 Jan 2018 18:23 |
Published Version: | http://dx.doi.org/10.1063/1.4936962 |
Status: | Published |
Publisher: | American Institute of Physics (AIP) |
Identification Number: | 10.1063/1.4936962 |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:92367 |