Cheong, J.S., Ng, J.S., Krysa, A.B. et al. (2 more authors) (2015) Determination of absorption coefficients in AlInP lattice matched to GaAs. Journal of Physics D: Applied Physics, 48 (40). 5101. ISSN 0022-3727
Abstract
The absorption properties of Al0.52In0.48P have been investigated near the fundamental absorption edge by measuring the photocurrent as a function of wavelength in a series of PIN and NIP diodes. Modelling of the photocurrent in these structures enables the absorption coefficients to be determined accurately over a wide dynamic range, which allows the direct and indirect band-gap to be determined.
Metadata
Item Type: | Article |
---|---|
Authors/Creators: |
|
Copyright, Publisher and Additional Information: | © 2015 IOP Publishing Ltd. This is an author produced version of a paper subsequently published in Journal of Physics D: Applied Physics. Uploaded in accordance with the publisher's self-archiving policy. |
Dates: |
|
Institution: | The University of Sheffield |
Academic Units: | The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield) |
Depositing User: | Symplectic Sheffield |
Date Deposited: | 29 Oct 2015 14:58 |
Last Modified: | 25 Oct 2016 06:16 |
Published Version: | http://dx.doi.org/10.1088/0022-3727/48/40/405101 |
Status: | Published |
Publisher: | IOP Publishing |
Refereed: | Yes |
Identification Number: | 10.1088/0022-3727/48/40/405101 |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:91100 |