InAs Diodes Fabricated Using Be Ion Implantation

White, B.S., Sandall, I.C., David, J.P.R. et al. (1 more author) (2015) InAs Diodes Fabricated Using Be Ion Implantation. IEEE Transactions on Electron Devices, 62 (9). 2928 - 2932. ISSN 0018-9383

Abstract

Metadata

Item Type: Article
Authors/Creators:
  • White, B.S.
  • Sandall, I.C.
  • David, J.P.R.
  • Tan, C.H.
Copyright, Publisher and Additional Information:

© 2015 IEEE. Translations and content mining are permitted for academic research only. Personal use is also permitted, but republication/redistribution requires IEEE permission.
Keywords: Annealing; indium arsenide; ion implantation; photodiode
Dates:
  • Published: September 2015
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Depositing User: Symplectic Sheffield
Date Deposited: 27 Oct 2015 16:50
Last Modified: 27 Oct 2015 16:56
Published Version: https://doi.org/10.1109/TED.2015.2456434
Status: Published
Publisher: IEEE
Refereed: Yes
Identification Number: 10.1109/TED.2015.2456434
Related URLs:
Open Archives Initiative ID (OAI ID):

Export

Statistics


CORE (COnnecting REpositories)