Ferreira, Aires orcid.org/0000-0001-6017-8669, Rappoport, Tatiana G., Cazalilla, Miguel A. et al. (1 more author) (2014) Extrinsic Spin Hall Effect Induced by Resonant Skew Scattering in Graphene. Physical Review Letters. 066601. ISSN 1079-7114
Abstract
We show that the extrinsic spin Hall effect can be engineered in monolayer graphene by decoration with small doses of adatoms, molecules, or nanoparticles originating local spin-orbit perturbations. The analysis of the single impurity scattering problem shows that intrinsic and Rashba spin-orbit local couplings enhance the spin Hall effect via skew scattering of charge carriers in the resonant regime. The solution of the transport equations for a random ensemble of spin-orbit impurities reveals that giant spin Hall currents are within the reach of the current state of the art in device fabrication. The spin Hall effect is robust with respect to thermal fluctuations and disorder averaging.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | © 2014 American Physical Society. Reproduced in accordance with the publisher's self-archiving policy. |
Keywords: | graphene,spin Hall effect,adatoms,skew scattering,spin transport |
Dates: |
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Institution: | The University of York |
Academic Units: | The University of York > Faculty of Sciences (York) > Physics (York) |
Depositing User: | Pure (York) |
Date Deposited: | 16 Nov 2015 14:48 |
Last Modified: | 16 Oct 2024 12:39 |
Published Version: | https://doi.org/10.1103/PhysRevLett.112.066601 |
Status: | Published |
Refereed: | Yes |
Identification Number: | 10.1103/PhysRevLett.112.066601 |
Related URLs: | |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:89594 |