Boyle, S.J., Ramsay, A.J., Fox, A.M. et al. (3 more authors) (2009) Beating of exciton-dressed states in a single semiconductor InGaAs/GaAs quantum dot. Physical Review Letters, 102 (20). Art. No.207401. ISSN 0031-9007
Abstract
We report picosecond control of excitonic dressed states in a single semiconductor quantum dot. A strong laser pulse couples the exciton and biexciton states, to form an Autler-Townes doublet of the neutral exciton transition. The Rabi-splitting, and hence the admixture of the dressed states follows the envelope of the picosecond control laser. We create a superposition of dressed states, and observe the resulting beat: a direct measurement of a Rabi oscillation in time delay rather than the usual power domain.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | © 2009 American Physical Society. This is an author produced version of a paper subsequently published in Physical Review Letters. Uploaded in accordance with the publisher's self-archiving policy. |
Dates: |
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Institution: | The University of Sheffield |
Academic Units: | The University of Sheffield > Faculty of Science (Sheffield) > Department of Physics and Astronomy (Sheffield) The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield) |
Depositing User: | Miss Anthea Tucker |
Date Deposited: | 29 Jun 2009 15:19 |
Last Modified: | 08 Feb 2013 16:58 |
Published Version: | http://dx.doi.org/10.1103/PhysRevLett.102.207401 |
Status: | Published |
Publisher: | American Physical Society |
Refereed: | Yes |
Identification Number: | 10.1103/PhysRevLett.102.207401 |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:8733 |