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Walther, T. (2015) Accurate measurement of atomic segregation to grain boundaries or to planar faults by analytical transmission electron microscopy. Physica Status Solidi (c), 12 (3). 310 - 313. ISSN 1862-6351
Abstract
A method of analytical transmission electron microscopy is described that has been successfully applied to study dopant segregation to inversion domain boundaries in zinc oxide, to quantify the thicknesses of sub-nanometre thin epitaxial layers grown by molecular beam epitaxy of indium arsenide (InAs) on gallium arsenide (GaAs) or silicon/germanium on silicon and proved the absence of any gettering of As or Ga dopants at Sigma=3 {111} grain boundaries in silicon, with a precision of <1 atom/nm2 in each case. Here, the case study of InAs/GaAs is reviewed in detail and the procedure for quantification of full hyperspectral data sets is explained. (© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Metadata
Item Type: | Article |
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Authors/Creators: |
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Editors: |
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Copyright, Publisher and Additional Information: | © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. This is an author produced version of a paper subsequently published in physica status solidi (c). Uploaded in accordance with the publisher's self-archiving policy. This is the peer reviewed version of the following article: Walther, T., 'Accurate measurement of atomic segregation to grain boundaries or to planar faults by analytical transmission electron microscopy', which has been published in final form at https://doi.org/10.1002/pssc.201400121. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Self-Archiving (http://olabout.wiley.com/WileyCDA/Section/id-820227.html). |
Keywords: | analytical electron microscopy; (scanning) transmission electron microscopy; segregation; X-ray mapping |
Dates: |
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Institution: | The University of Sheffield |
Academic Units: | The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield) |
Depositing User: | Symplectic Sheffield |
Date Deposited: | 09 Oct 2015 12:57 |
Last Modified: | 16 Nov 2016 10:25 |
Published Version: | https://doi.org/10.1002/pssc.201400121 |
Status: | Published |
Publisher: | Wiley-VCH Verlag |
Refereed: | Yes |
Identification Number: | 10.1002/pssc.201400121 |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:86360 |
Available Versions of this Item
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Accurate measurement of atomic segregation to grain boundaries or to planar faults by analytical transmission electron microscopy. (deposited 02 Jun 2015 10:57)
- Accurate measurement of atomic segregation to grain boundaries or to planar faults by analytical transmission electron microscopy. (deposited 09 Oct 2015 12:57) [Currently Displayed]