Kundrotas, J, Čerškus, A, Valušis, G et al. (3 more authors) (2014) Dynamics of free carriers – neutral impurity related optical transitions in Be and Si d-doped GaAs/AlAs multiple quantum wells: Fractional-dimensional space approach. Lithuanian Journal of Physics, 54 (4). 233 - 243. ISSN 1648-8504
Abstract
The dynamics of impurity-related optical transitions in 20 nm wide silicon and beryllium δ-doped GaAs/AlAs multiple quantum wells with various doping levels has been investigated at near liquid helium temperatures. The radiative lifetimes of the free electron-neutral acceptor and the free hole-neutral donor have been identified. The capture cross-sections of the free electrons by neutral Be acceptors were experimentally determined to σe-Be = 4 × 10–10 cm, whereas this corresponded to σh-Si = 2.2 × 10–8 cm for the free holes by neutral Si donors. The experimentally determined cross-section ratio of σh-Si/σe-Be = 55 is close to the estimated 2D value of σh-D /σe-A = 64 and remains lower compared to the calculated value for the 3D case of σh-D /σe-A = 121.
Metadata
| Item Type: | Article |
|---|---|
| Authors/Creators: |
|
| Keywords: | Quantum well; photoluminescence; lifetime; capture cross-sections |
| Dates: |
|
| Institution: | The University of Leeds |
| Academic Units: | The University of Leeds > Faculty of Engineering & Physical Sciences (Leeds) > School of Electronic & Electrical Engineering (Leeds) > Pollard Institute (Leeds) |
| Depositing User: | Symplectic Publications |
| Date Deposited: | 18 Mar 2015 14:29 |
| Last Modified: | 18 Mar 2015 14:29 |
| Published Version: | http://dx.doi.org/10.3952/physics.v54i4.3012 |
| Status: | Published |
| Publisher: | Lithuanian Academy of Sciences |
| Identification Number: | 10.3952/physics.v54i4.3012 |
| Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:83527 |
CORE (COnnecting REpositories)
CORE (COnnecting REpositories)