Epitaxy and photoluminescence studies of high quality GeSn heterostructures with Sn concentrations up to 13 at.%
Wirths, S, Geiger, R, Ikonic, Z et al. (7 more authors)
(2014)
Epitaxy and photoluminescence studies of high quality GeSn heterostructures with Sn concentrations up to 13 at.%.
In:
IEEE International Conference on Group IV Photonics GFP.
2014 IEEE 11th International Conference on Group IV Photonics (GFP), 27-29 Aug 2014, Paris, France.
IEEE Computer Society
, 15 - 16.
ISBN 9781479922833
Abstract
We present photoluminescence measurements on highly compressively strained and partially relaxed GeSn alloys with Sn contents up to 13 at.%. Calculations predict a net gain of 572 cm-1 for partially relaxed and moderately doped Ge0.88Sn0.12.
Metadata
Item Type:
Proceedings Paper
Authors/Creators:
Wirths, S
Geiger, R
Ikonic, Z
Tiedemann, AT
Mussler, G
Hartmann, J-M
Mantl, S
Sigg, H
Grützmacher, D
Buca, D
Copyright, Publisher and Additional Information:
(c) 2014 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works
Keywords:
Chemical Vapor Deposition; Germanium-Tin; Group IV alloys; Laser materials; low temperature epitaxy; Photoluminescence; Si photonics
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