Wirths, S, Stange, D, Pampillón, M-A et al. (11 more authors) (2015) High- k gate stacks on low bandgap tensile strained Ge and GeSn alloys for field-effect transistors. ACS Applied Materials and Interfaces, 7 (1). 62 - 67. ISSN 1944-8252
Abstract
We present the epitaxial growth of Ge and Ge0.94Sn0.06 layers with 1.4% and 0.4% tensile strain, respectively, by reduced pressure chemical vapor deposition on relaxed GeSn buffers and the formation of high-k/metal gate stacks thereon. Annealing experiments reveal that process temperatures are limited to 350 °C to avoid Sn diffusion. Particular emphasis is placed on the electrical characterization of various high-k dielectrics, as 5 nm Al2O3, 5 nm HfO2, or 1 nmAl2O3/4 nm HfO2, on strained Ge and strained Ge0.94Sn0.06. Experimental capacitance-voltage characteristics are presented and the effect of the small bandgap, like strong response of minority carriers at applied field, are discussed via simulations.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Keywords: | strained Ge; GeSn; high- k dielectrics; low bandgap alloys; field effect transistor |
Dates: |
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Institution: | The University of Leeds |
Academic Units: | The University of Leeds > Faculty of Engineering & Physical Sciences (Leeds) > School of Electronic & Electrical Engineering (Leeds) > Pollard Institute (Leeds) |
Depositing User: | Symplectic Publications |
Date Deposited: | 17 Mar 2015 09:52 |
Last Modified: | 08 Nov 2016 19:13 |
Published Version: | http://dx.doi.org/10.1021/am5075248 |
Status: | Published |
Publisher: | American Chemical Society |
Identification Number: | 10.1021/am5075248 |
Related URLs: | |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:83479 |