Wirths, S, Geiger, R, von den Driesch, N et al. (11 more authors) (2015) Lasing in direct-bandgap GeSn alloy grown on Si. Nature Photonics, 9 (2). 88 - 92. ISSN 1749-4885
Abstract
Large-scale optoelectronics integration is limited by the inability of Si to emit light efficiently, because Si and the chemically well-matched Ge are indirect-bandgap semiconductors. To overcome this drawback, several routes have been pursued, such as the all-optical Si Raman laser and the heterogeneous integration of direct-bandgap III-V lasers on Si. Here, we report lasing in a direct-bandgap group IV system created by alloying Ge with Sn without mechanically introducing strain. Strong enhancement of photoluminescence emerging from the direct transition with decreasing temperature is the signature of a fundamental direct-bandgap semiconductor. For Tâ €‰â ‰â €‰90K, the observation of a threshold in emitted intensity with increasing incident optical power, together with strong linewidth narrowing and a consistent longitudinal cavity mode pattern, highlight unambiguous laser action. Direct-bandgap group IV materials may thus represent a pathway towards the monolithic integration of Si-photonic circuitry and complementary metal-oxide-semiconductor (CMOS) technology.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | © 2015 Macmillan Publishers Limited. All rights reserved. This is an author produced version of a paper published in Nature Photonics. Uploaded in accordance with the publisher's self-archiving policy |
Dates: |
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Institution: | The University of Leeds |
Academic Units: | The University of Leeds > Faculty of Engineering & Physical Sciences (Leeds) > School of Electronic & Electrical Engineering (Leeds) > Pollard Institute (Leeds) |
Depositing User: | Symplectic Publications |
Date Deposited: | 16 Mar 2015 12:39 |
Last Modified: | 06 Aug 2015 12:02 |
Published Version: | http://dx.doi.org/10.1038/nphoton.2014.321 |
Status: | Published |
Publisher: | Nature Publishing Group |
Identification Number: | 10.1038/nphoton.2014.321 |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:83478 |