Hamilton, A, Frost, J, Smith, C et al. (8 more authors) (1992) Back‐gated split‐gate transistor: A one‐dimensional ballistic channel with variable Fermi energy. Applied Physics Letters, 60 (22). pp. 2782-2784. ISSN 0003-6951
Abstract
We have studied the quantized conductance of a one‐dimensional ballistic channel in the two‐dimensional electron gas of a back‐gated GaAs/AlGaAs heterostructure. A standard Schottky split‐gate fabricated with electron‐beam lithography techniques is used to define the one‐dimensional channel, but we incorporate an epitaxially grownin situ back‐gate, situated ∼1 μm below the electron gas, to provide additional control of the carrier density. Quantized conductance steps can be induced by changing the bias on either gate, highlighting the self‐consistent nature of the electrostatics involved. We show that we can, in principle, achieve independent control of the one‐dimensional carrier density and channel width.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Keywords: | Ballistic transport; Carrier density; Electron gas; Electrostatics; Epitaxy |
Dates: |
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Institution: | The University of Leeds |
Academic Units: | The University of Leeds > Faculty of Engineering & Physical Sciences (Leeds) > School of Electronic & Electrical Engineering (Leeds) > Pollard Institute (Leeds) |
Depositing User: | Symplectic Publications |
Date Deposited: | 12 Jul 2016 11:12 |
Last Modified: | 12 Jul 2016 11:12 |
Published Version: | http://dx.doi.org/10.1063/1.106849%20%EE%98%8E |
Status: | Published |
Publisher: | American Institute of Physics |
Identification Number: | 10.1063/1.106849 |
Related URLs: | |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:83103 |