Linfield, E, Ritchie, D, Jones, G et al. (2 more authors) (1990) The effect of low-energy GA IONS on GAAS/AIGAAS heterostructures. Semiconductor Science and Technology, 5 (5). pp. 385-390. ISSN 0268-1242
Abstract
A high-mobility two-dimensional electron gas at a GaAs/AIGaAs heterojunction has been exposed to low-energy Ga ion beams. We report the reduction in both the sheet carrier density and mobility at 4 K for ion doses and energies in the range 101’-101’ cm-’ and 1-6 keV respectively. The sheet resistivity can be increased by a factor of 10” with a dose of 2 x 10” cm -’io ns at 6 keV. The ion irradiation also reduces the persistence of the low-temperature photo-induced conduction and increases the amount of ionised impurity scattering. Reduced photoluminescence from wells close to the surface of a multiple quantum well structure extends the transport data to suggest a range of ~ 7 n0m from the surface over which electronic properties are modified. An ultra-high vacuum compatible method for altering the surface electronic properties therefore seems viable.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Dates: |
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Institution: | The University of Leeds |
Academic Units: | The University of Leeds > Faculty of Engineering & Physical Sciences (Leeds) > School of Electronic & Electrical Engineering (Leeds) > Pollard Institute (Leeds) |
Depositing User: | Symplectic Publications |
Date Deposited: | 12 Jul 2016 11:00 |
Last Modified: | 04 Nov 2016 02:05 |
Published Version: | http://dx.doi.org./10.1088/0268-1242/5/5/002 |
Status: | Published |
Publisher: | IOP Publishing |
Identification Number: | 10.1088/0268-1242/5/5/002 |
Related URLs: | |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:83081 |