Ong, J.S.L., Ng, J.S., Krysa, A.B. et al. (1 more author) (2014) Temperature dependence of avalanche multiplication and breakdown voltage in Al0.52In0.48P. Journal of Applied Physics, 115. 064507. ISSN 0021-8979
Abstract
The temperature dependence of avalanche multiplication and breakdown voltage in Al 0.52In0.48P, lattice-matched to GaAs, has been measured on a series of p+-i-n+ and n+ -i-p+ diodes with nominal avalanche region thicknesses ranging from 0.068 to 1.0 μm from 77.8 to 298 K. From this, impact ionization coefficients as a function of temperature have been determined. For a given avalanche region thickness, Al 0.52In0.48P exhibits temperature coefficient of breakdown voltage smaller than those of Ga0.52In0.48P and Al 0.6Ga0.4As by approximately 1.6× and 2.0×, respectively. Our analysis shows that the alloy disorder potential and alloy composition ratio may be responsible for the large variation in temperature coefficient of breakdown voltages observed in a range of III–V ternary semiconductors.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Dates: |
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Institution: | The University of Sheffield |
Academic Units: | The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield) |
Depositing User: | Symplectic Sheffield |
Date Deposited: | 03 Nov 2014 10:49 |
Last Modified: | 03 Nov 2014 10:57 |
Published Version: | http://dx.doi.org/10.1063/1.4865743 |
Status: | Published |
Publisher: | American Institute of Physics |
Identification Number: | 10.1063/1.4865743 |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:81376 |