Ng, J.S., Meng, X., Lees, J.E. et al. (2 more authors) (2014) Fabrication study of GaAs mesa diodes for X-ray detection. Journal of Instrumentation, 9. T08005. ISSN 1748-0221
Abstract
A study of leakage currents using GaAs mesa p-i-n diodes for X-ray photon counting is presented. Different wet chemical etching solution and etch depth were used in the fabrication of these mesa diodes. Low and uniform leakage currents were achieved when the diode fabrication used (i) a combination of main etching solution and finishing etching solution for the etching, and (ii) partially etched mesas. The diodes fabricated using these methods showed well-defined X-ray peaks when illuminated with an 55Fe radioisotope source.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | © 2014 IOP Publishing. This is an author produced version of a paper subsequently published in Journal of Instrumentation. Uploaded in accordance with the publisher's self-archiving policy. |
Keywords: | Solid state detectors; X-ray detectors; Detector design and construction technologies and materials |
Dates: |
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Institution: | The University of Sheffield |
Academic Units: | The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield) |
Depositing User: | Symplectic Sheffield |
Date Deposited: | 03 Nov 2014 10:42 |
Last Modified: | 24 Oct 2015 19:06 |
Published Version: | http://dx.doi.org/10.1088/1748-0221/9/08/T08005 |
Status: | Published |
Publisher: | IOP Publishing |
Refereed: | Yes |
Identification Number: | 10.1088/1748-0221/9/08/T08005 |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:81373 |