1550 nm InGaAs/InAlAs single photon avalanche diode at room temperature

Abstract

An InGaAs/InAlAs Single Photon Avalanche Diode was fabricated and characterized. Leakage current, dark count and photon count measurements were carried out on the devices from 260 to 290 K. Due to better temperature stability of avalanche breakdown in InAlAs, the device breakdown voltage varied by < 0.2 V over the 30 K temperature range studied, which corresponds to a temperature coefficient of breakdown voltage less than 7 mV/K. The single photon detection efficiency achieved in gated mode was 21 and 10% at 260 and 290 K, respectively. However the dark count rates were high due to excessive band-to-band tunneling current in the InAlAs avalanche region.

Metadata

Item Type:	Article
Authors/Creators:	Meng, X. Tan, C.H. Dimler, S. David, J.P.R. Ng, J.S.
Copyright, Publisher and Additional Information:	© 2014 Optical Society of America. Reproduced in accordance with the publisher's self-archiving policy.
Dates:	Published: 22 September 2014
Institution:	The University of Sheffield
Academic Units:	The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Depositing User:	Symplectic Sheffield
Date Deposited:	03 Nov 2014 10:36
Last Modified:	03 Nov 2014 10:36
Published Version:	http://dx.doi.org/10.1364/OE.22.022608
Status:	Published
Publisher:	Optical Society of American (OSA)
Refereed:	Yes
Identification Number:	10.1364/OE.22.022608
Open Archives Initiative ID (OAI ID):	oai:eprints.whiterose.ac.uk:81372

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1550 nm InGaAs/InAlAs single photon avalanche diode at room temperature

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