A single-layer tuneable microwave absorber using an active FSS

Abstract

An experimental single-layer active microwave absorber in described. The absorber is a planar structure based upon the topology of a Salisbury screen, but in which the conventional resistive layer is replaced by an active frequency selective surface (FSS) controlled by pin diodes. The resulting structure has superior reflectivity-bandwidth characteristics compared to conventional passive absorbers of corresponding thickness. Measured data are presented and show that the reflectivity response of the absorber can be controlled over the frequency band from 9 to 13 GHz.

Metadata

Item Type:	Article
Authors/Creators:	Tennant, A. Chambers, B.
Copyright, Publisher and Additional Information:	Copyright © 2004 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Keywords:	absorber, active, adaptive, frequency selective surface (FSS)
Dates:	Published: January 2004
Institution:	The University of Sheffield
Academic Units:	The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Depositing User:	Sherpa Assistant
Date Deposited:	07 Dec 2005
Last Modified:	04 Jun 2014 09:33
Published Version:	http://dx.doi.org/10.1109/LMWC.2003.820639
Status:	Published
Refereed:	Yes
Identification Number:	10.1109/LMWC.2003.820639
Open Archives Initiative ID (OAI ID):	oai:eprints.whiterose.ac.uk:803

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A single-layer tuneable microwave absorber using an active FSS

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