Evans, C.A., Jovanović, V.D., Indjin, D. et al. (2 more authors) (2006) Thermal effects in InGaAs/AlAsSb quantum-cascade lasers. Optoelectronics - IEE Proceedings, 153 (6). pp. 287-292. ISSN 1350-2433
Abstract
A quantum-cascade laser (QCL) thermal model is presented. On the basis of a finite-difference approach, the model is used in conjunction with a self-consistent carrier transport model to calculate the temperature distribution in a near-infrared InGaAs/AlAsSb QCL. The presented model is used to investigate the effects of driving conditions and device geometries on the active-region temperature, which has a major influence on the device performance. A buried heterostructure combined with epilayer-down mounting is found to offer the best performance compared with alternative structures and has thermal time constants up to eight times smaller. The presented model provides a valuable tool for understanding the thermal dynamics inside a QCL and will help to improve operating temperatures.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | © 2006 The Institute of Engineering and Technology. This is an author produced version of a paper published in 'Optoelectronics - IEE Proceedings'. Uploaded in accordance with the publisher's self archiving policy. |
Dates: |
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Institution: | The University of Leeds |
Academic Units: | The University of Leeds > Faculty of Engineering & Physical Sciences (Leeds) > School of Electronic & Electrical Engineering (Leeds) > Pollard Institute (Leeds) |
Depositing User: | Sherpa Assistant |
Date Deposited: | 13 Mar 2009 18:19 |
Last Modified: | 16 Sep 2016 13:46 |
Published Version: | http://dx.doi.org/10.1049/ip-opt:20060039 |
Status: | Published |
Publisher: | The Institution of Engineering and Technology |
Refereed: | Yes |
Identification Number: | 10.1049/ip-opt:20060039 |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:7975 |