Palenskis, V, Matukas, J, Pralgauskaite, S et al. (6 more authors) (2013) Low-frequency noise properties of beryllium δ-doped GaAs/AlAs quantum wells near the Mott transition. Journal of Applied Physics, 113 (8). 083707. ISSN 0021-8979
Abstract
Noise properties of beryllium delta-doped GaAs/AlAs multiple quantum wells, doped both above and below the Mott transition, are studied within the frequency range of 10 Hz-20 kHz and at temperature from 77 K to 350 K. It is shown that the generation-recombination noise in structures close to the Mott transition exhibits two peaks - a frequency and temperature-dependent peak between 120 and 180 K and a broadband, frequency- and temperature- nearly independent peak around 270 K. Activation energies are estimated; origin of the broadband maximum is attributed to holes tunnelling into defect trap states located in the AlAs barrier/GaAs quantum well interface.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | (c) 2013, American Institute of Physics. Reproduced in accordance with the publisher's self-archiving policy. |
Dates: |
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Institution: | The University of Leeds |
Academic Units: | The University of Leeds > Faculty of Engineering & Physical Sciences (Leeds) > School of Electronic & Electrical Engineering (Leeds) > Pollard Institute (Leeds) |
Depositing User: | Symplectic Publications |
Date Deposited: | 22 May 2014 10:59 |
Last Modified: | 22 Jan 2018 09:52 |
Published Version: | http://dx.doi.org/10.1063/1.4792741 |
Status: | Published |
Publisher: | American Institute of Physics |
Identification Number: | 10.1063/1.4792741 |
Related URLs: | |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:78962 |