Wirths, S, Tiedemann, AT, Ikonic, Z et al. (9 more authors) (2013) Band engineering and growth of tensile strained Ge/(Si)GeSn heterostructures for tunnel field effect transistors. Applied Physics Letters, 102 (19). 192103. ISSN 0003-6951
Abstract
In this letter, we propose a heterostructure design for tunnel field effect transistors with two low direct bandgap group IV compounds, GeSn and highly tensely strained Ge in combination with ternary SiGeSn alloy. Electronic band calculations show that strained Ge, used as channel, grown on Ge Sn (x > 9) buffer, as source, becomes a direct bandgap which significantly increases the tunneling probability. The SiGeSn ternaries are well suitable as drain since they offer a large indirect bandgap. The growth of such heterostructures with the desired band alignment is presented. The crystalline quality of the (Si)Ge(Sn) layers is similar to state-of-the-art SiGe layers.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | (c) 2013, American Institute of Physics. This is an author produced version of a paper published in Applied Physics Letters. Uploaded in accordance with the publisher's self-archiving policy. |
Keywords: | Germanium; Elemental semiconductors; Band gap; Epitaxy; Tunneling; Semiconductor growth; Heterojunctions; Field effect transistors; Semiconductors; Stress relaxation |
Dates: |
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Institution: | The University of Leeds |
Academic Units: | The University of Leeds > Faculty of Engineering & Physical Sciences (Leeds) > School of Electronic & Electrical Engineering (Leeds) > Pollard Institute (Leeds) |
Depositing User: | Symplectic Publications |
Date Deposited: | 19 Mar 2014 11:21 |
Last Modified: | 29 Mar 2018 12:47 |
Published Version: | http://dx.doi.org/10.1063/1.4805034 |
Status: | Published |
Publisher: | American Institute of Physics |
Identification Number: | 10.1063/1.4805034 |
Related URLs: | |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:78157 |