Ramasse, QM, Seabourne, CR, Kepaptsoglou, DM et al. (3 more authors) (2012) Probing the bonding and electronic structure of single atom dopants in graphene with electron energy loss spectroscopy. Nano Letters: a journal dedicated to nanoscience and nanotechnology, 13 (10). 4989 - 4995. ISSN 1530-6984
Abstract
A combination of scanning transmission electron microscopy, electron energy loss spectroscopy, and ab initio calculations reveal striking electronic structure differences between two distinct single substitutional Si defect geometries in graphene. Optimised acquisition conditions allow for exceptional signal-to-noise levels in the spectroscopic data. The near-edge fine structure can be compared with great accuracy to simulations and reveal either an sp3-like configuration for a trivalent Si or a more complicated hybridized structure for a tetravalent Si impurity.
Metadata
Item Type: | Article |
---|---|
Authors/Creators: |
|
Dates: |
|
Institution: | The University of Leeds |
Academic Units: | The University of Leeds > Faculty of Engineering & Physical Sciences (Leeds) > School of Chemical & Process Engineering (Leeds) > Institute for Materials Research (Leeds) |
Depositing User: | Symplectic Publications |
Date Deposited: | 28 Nov 2013 14:41 |
Last Modified: | 15 Sep 2014 02:40 |
Published Version: | http://dx.doi.org/10.1021/nl304187e |
Status: | Published |
Publisher: | American Chemical Society |
Identification Number: | 10.1021/nl304187e |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:77084 |