Schmidt, T., Kröger, R., Flege, J.I. et al. (7 more authors) (2006) Less strain energy despite fewer dislocations: The Impact of Ordering. Physical Review Letters, 96 (6). 066101-4 PAGES. ISSN 0031-9007
Abstract
The average strain state of Ge films grown on Si(111) by surfactant mediated epitaxy has been compared to the ordering of the interfacial misfit dislocation network. Surprisingly, a smaller degree of average lattice relaxation was found in films grown at higher temperature. On the other hand, these films exhibit a better ordered dislocation network. This effect energetically compensates the higher strain at higher growth temperature, leading to the conclusion that, apart from the formation of misfit dislocations, their ordering represents an important channel for lattice-strain energy relaxation.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Dates: |
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Institution: | The University of York |
Academic Units: | The University of York > Faculty of Sciences (York) > Physics (York) |
Depositing User: | York RAE Import |
Date Deposited: | 25 Feb 2009 12:19 |
Last Modified: | 25 Feb 2009 12:19 |
Published Version: | http://dx.doi.org/10.1103/PhysRevLett.96.066101 |
Status: | Published |
Publisher: | American Physical Society |
Identification Number: | 10.1103/PhysRevLett.96.066101 |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:7222 |