Electrical and radiation characteristics of semilarge photoconductive terahertz emitters

Abstract

We present experimental characterization of semilarge photoconductive emitters, including their electrical/photoconductive parameters and terahertz spectra. A range of emitters were studied and fabricated on both LT-GaAs and SI-GaAs, having a variety of electrode geometries. The spatial cone of terahertz radiation was defined. The dependencies of the photocurrent and the terahertz power on the bias voltage and the laser power were determined. A Fourier-transform interferometer is used to determine the terahertz spectra and to clarify the effects of the substrate and electrode geometry.

Metadata

Item Type:	Article
Authors/Creators:	Stone, M.R. Naftaly, M. Miles, R.E. Fletcher, J.R. Steenson, D.P.
Copyright, Publisher and Additional Information:	Copyright © 2004 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Keywords:	interferometer, low-temperature (LT) grown GaAs, photoconductive emitter, terahertz
Dates:	Published: October 2004
Institution:	The University of Leeds
Academic Units:	The University of Leeds > Faculty of Engineering & Physical Sciences (Leeds) > School of Electronic & Electrical Engineering (Leeds) > Pollard Institute (Leeds)
Depositing User:	Sherpa Assistant
Date Deposited:	10 Oct 2005
Last Modified:	29 Oct 2016 06:01
Published Version:	http://dx.doi.org/10.1109/TMTT.2004.835980
Status:	Published
Refereed:	Yes
Identification Number:	10.1109/TMTT.2004.835980
Open Archives Initiative ID (OAI ID):	oai:eprints.whiterose.ac.uk:720

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Electrical and radiation characteristics of semilarge photoconductive terahertz emitters

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