Perkins, E.W., Bonet, C. and Tear, S.P. (2005) Silicon overlayer growth on clean and hydrogen-terminated two-dimensional holmium silicide. Physical Review B, 72 (19). 195406-5 PAGES. ISSN 1550-235X
Abstract
The growth of silicon overlayers on both two-dimensional (2D) holmium silicide and hydrogen-terminated 2D holmium silicide grown on Si(111) has been investigated using scanning tunneling microscopy (STM). In the nonhydrogen-terminated case, the surface is heavily islanded, exhibiting the 7×7 and 2×1 silicon reconstructions. Growth on the hydrogen-terminated surface differs substantially, being better ordered and less heavily islanded. Growth mechanisms are proposed to explain these observed differences. STM data are also presented from the hydrogen-terminated 2D holmium silicide surface.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Dates: |
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Institution: | The University of York |
Academic Units: | The University of York > Faculty of Sciences (York) > Physics (York) |
Depositing User: | York RAE Import |
Date Deposited: | 26 Feb 2009 11:51 |
Last Modified: | 26 Feb 2009 11:51 |
Published Version: | http://dx.doi.org/10.1103/PhysRevB.72.195406 |
Status: | Published |
Publisher: | The American Physical Society. |
Identification Number: | 10.1103/PhysRevB.72.195406 |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:7188 |