Harrison, P. and Soref, R.A. (2001) Population-inversion and gain estimates for a semiconductor TASER. IEEE Journal of Quantum Electronics, 37 (1). pp. 153-158. ISSN 0018-9197
Abstract
We have investigated a solid-state design advanced (see Soref et al, in SPIE Proceedings, vol. 3795, p, 516, 1999) to achieve a terahertz-amplification-by-the-stimulated-emision-of-radiation (TASER), The original design was based on light-to heavy-hole intersubband transitions in SiGe/Si heterostructures, This work adapts the design to electron intersubband transitions in the more readily available GaAs/Ga1-xAlxAs material system. It is found that the electric-field induced anti-crossings of the states, derived from the first excited state with the ground states of a superlattice in the Stark-ladder regime, offers the possibility of a population inversion and gain at room temperature.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | Copyright © 2001 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. |
Dates: |
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Institution: | The University of Leeds |
Academic Units: | The University of Leeds > Faculty of Engineering & Physical Sciences (Leeds) > School of Electronic & Electrical Engineering (Leeds) > Pollard Institute (Leeds) |
Depositing User: | Sherpa Assistant |
Date Deposited: | 10 Oct 2005 |
Last Modified: | 25 Oct 2016 23:52 |
Published Version: | http://dx.doi.org/10.1109/3.892737 |
Status: | Published |
Refereed: | Yes |
Identification Number: | 10.1109/3.892737 |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:709 |