Nikolaev, V V and Avrutin, E A orcid.org/0000-0001-5488-3222 (2003) Photocarrier escape time in quantum-well light-absorbing devices: Effects of electric field and well parameters. IEEE Journal of Quantum Electronics. pp. 1653-1660. ISSN 0018-9197
Abstract
We analyze the dependence of the carrier escape time from a single-quantum-well optoelectronic device on the aplied electric field and well width and depth. For this purpose, a new simple and computationally efficient theory is developed. This theory is accurate in the case of electrons, and the assessment of the applicability for holes is given. Semi-analytical expressions for the,escape times are derived. Calculations are compared to experimental results and previous numerical simulations. Significant correlations between the Position,of quantum-well energy levels and the value of the escape time are found. the main escape mechanism At room temperature is established to be thermally assisted tunneling/emission through near-barrier-edge states. The formation of a new eigenstate in the near-barrier-edge energy region is found to reduce the electron escape time significantly, which can be used for practical device optimization.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | Copyright © 2003 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. |
Keywords: | optoelectronic devices,quantum wells (QWs),saturable absorbers,LOCKED SEMICONDUCTOR-LASERS,DYNAMICS,ALXGA1-XAS,EQUATION,STATES,GAAS |
Dates: |
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Institution: | The University of York |
Academic Units: | The University of York > Faculty of Sciences (York) > Electronic Engineering (York) |
Depositing User: | Eugene A Avrutin |
Date Deposited: | 19 Sep 2005 |
Last Modified: | 10 Dec 2024 00:08 |
Published Version: | https://doi.org/10.1109/JQE.2003.819527 |
Status: | Published |
Refereed: | Yes |
Identification Number: | 10.1109/JQE.2003.819527 |
Related URLs: | |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:632 |