Califano, M., Vinh, N.Q., Phillips, P.J. et al. (10 more authors) (2007) Interwell relaxation times in p-Si/SiGe asymmetric quantum well structures: the role of interface roughness. Physical Review B, 75 (4). Art. No. 045338. ISSN 1550-235x
Abstract
We report the direct determination of nonradiative lifetimes in Si∕SiGe asymmetric quantum well structures designed to access spatially indirect (diagonal) interwell transitions between heavy-hole ground states, at photon energies below the optical phonon energy. We show both experimentally and theoretically, using a six-band k∙p model and a time-domain rate equation scheme, that, for the interface quality currently achievable experimentally (with an average step height ⩾1 Å), interface roughness will dominate all other scattering processes up to about 200 K. By comparing our results obtained for two different structures we deduce that in this regime both barrier and well widths play an important role in the determination of the carrier lifetime. Comparison with recently published experimental and theoretical data obtained for mid-infrared GaAs∕AlxGa1−xAs multiple quantum well systems leads us to the conclusion that the dominant role of interface roughness scattering at low temperature is a general feature of a wide range of semiconductor heterostructures not limited to IV-IV materials
Metadata
Item Type: | Article |
---|---|
Authors/Creators: |
|
Copyright, Publisher and Additional Information: | © 2007 The American Physical Society. This is an author produced version of a paper published in Physical Review B. Uploaded in accordance with the publisher's self archiving policy. |
Dates: |
|
Institution: | The University of Sheffield, The University of Leeds |
Academic Units: | The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield) The University of Leeds > Faculty of Engineering & Physical Sciences (Leeds) > School of Electronic & Electrical Engineering (Leeds) > Pollard Institute (Leeds) |
Depositing User: | Sherpa Assistant |
Date Deposited: | 15 Aug 2008 11:47 |
Last Modified: | 27 Oct 2016 16:11 |
Published Version: | http://dx.doi.org/10.1103/PhysRevB.75.045338 |
Status: | Published |
Publisher: | The American Physical Society |
Refereed: | Yes |
Identification Number: | 10.1103/PhysRevB.75.045338 |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:4325 |