Ryvkin, B. S., Panajotov, K. and Avrutin, E. A. orcid.org/0000-0001-5488-3222 (2008) Low saturation fluence in a semiconductor saturable electroabsorber mirror operated in a self-biased regime. Journal of Applied Physics. 103102. ISSN 1089-7550
Abstract
A semiconductor saturable absorber mirror utilizing the electroabsorption effect on a self-biased stack of extremely shallow quantum wells is proposed and analyzed theoretically and numerically. The saturation flux and recovery time of the proposed device when operated with picosecond incident pulses are shown to compare very favorably with existing all-optical constructions. (C) 2008 American Institute of Physics.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | © 2008 American Institute of Physics. This is an author produced version of a paper published in Journal Of Applied Physics. Uploaded in accordance with the publisher's self-archiving policy. |
Keywords: | SHALLOW QUANTUM-WELLS,LASERS,BISTABILITY,ABSORPTION,ABSORBER,DEVICES |
Dates: |
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Institution: | The University of York |
Academic Units: | The University of York > Faculty of Sciences (York) > Electronic Engineering (York) |
Depositing User: | Repository Officer |
Date Deposited: | 28 Jul 2008 15:03 |
Last Modified: | 16 Oct 2024 12:04 |
Published Version: | https://doi.org/10.1063/1.2921830 |
Status: | Published |
Refereed: | Yes |
Identification Number: | 10.1063/1.2921830 |
Related URLs: | |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:4092 |