Schmidt, R. and Brinkman, A.W. (2008) ac hopping admittance in spinel manganate negative temperature coefficient thermistor electroceramics. Journal of Applied Physics, 103 (11). p. 113710.
Abstract
In this work, the ac admittance of a thick film nickel manganate spinel negative temperature coefficient thermistor ceramic system containing a glass phase is investigated. The dominating relaxation process is a grain boundary (GB) effect and has been investigated comprehensively. We present double-logarithmic plots of the specific admittance vs and (/dc) vs , and specific impedance z vs −z/ and [(dc/z)−1] vs , in order to characterize GB charge transport. Using the complex admittance notation (*), an unusually low Jonscher exponent of frequency ~0.007 was obtained and the GB relaxation displayed close to ideal behavior.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | © 2008 Amer Inst Physics. This is an author produced version of a paper published in Journal of Applied Physics. Uploaded in accordance with the publisher's self archiving policy. |
Dates: |
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Institution: | The University of Sheffield |
Academic Units: | The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Materials Science and Engineering (Sheffield) |
Depositing User: | Sherpa Assistant |
Date Deposited: | 17 Jul 2008 14:47 |
Last Modified: | 08 Feb 2013 16:56 |
Published Version: | http://dx.doi.org/10.1063/1.2938029 |
Status: | Published |
Publisher: | American Institute Physics |
Refereed: | Yes |
Identification Number: | 10.1063/1.2938029 |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:4076 |