Schindlmayr, A. (1997) Excitons with anisotropic effective mass. European Journal of Physics. pp. 374-376. ISSN 1361-6404
Abstract
We present a simple analytic scheme for calculating the binding energy of excitons in semiconductors that takes full account of the existing anisotropy in the effective mass, as a complement to the qualitative treatment in most textbooks. Results obtained for excitons in gallium nitride form the basis for a discussion of the accuracy of this approach.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | © 1997 Institute of Physics. This is an author produced version of a paper published in the European Journal of Physics. Uploaded in accordance with the publisher's self archiving policy. |
Dates: |
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Institution: | The University of York |
Academic Units: | The University of York > Faculty of Sciences (York) > Physics (York) |
Depositing User: | Physics Import |
Date Deposited: | 12 Aug 2008 17:02 |
Last Modified: | 22 Oct 2024 23:50 |
Published Version: | https://doi.org/10.1088/0143-0807/18/5/011 |
Status: | Published |
Refereed: | Yes |
Identification Number: | 10.1088/0143-0807/18/5/011 |
Related URLs: | |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:4037 |