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Valavanis, A., Ikonic, Z. and Kelsall, R.W. (2008) Intersubband carrier scattering in n- and p-Si/SiGe quantum wells with diffuse interfaces. Physical Review B, 77 (7). 075312. ISSN 1550-235x
Abstract
Scattering rate calculations in two-dimensional Si/Si1−xGex systems have typically been restricted to rectangular Ge profiles at interfaces between layers. Real interfaces however, may exhibit diffuse Ge profiles either by design or as a limitation of the growth process. It is shown here that alloy disorder scattering dramatically increases with Ge interdiffusion in (100) and (111) n-type quantum wells, but remains almost constant in (100) p-type heterostructures. It is also shown that smoothing of the confining potential leads to large changes in subband energies and scattering rates and a method is presented for calculating growth process tolerances.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | © 2008 The American Physical Society. This is an author produced version of a paper published in Physical Review B. Uploaded in accordance with the publisher's self-archiving policy. |
Dates: |
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Institution: | The University of Leeds |
Academic Units: | The University of Leeds > Faculty of Engineering & Physical Sciences (Leeds) > School of Electronic & Electrical Engineering (Leeds) > Pollard Institute (Leeds) |
Depositing User: | Dr Alexander Valavanis |
Date Deposited: | 15 Feb 2008 16:18 |
Last Modified: | 05 Nov 2016 07:41 |
Published Version: | http://dx.doi.org/10.1103/PhysRevB.77.075312 |
Status: | Published |
Publisher: | The American Physical Society |
Refereed: | Yes |
Identification Number: | 10.1103/PhysRevB.77.075312 |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:3631 |
Available Versions of this Item
- Intersubband carrier scattering in n- and p-Si/SiGe quantum wells with diffuse interfaces. (deposited 15 Feb 2008 16:18) [Currently Displayed]