Effects of Doping, Transport Layer Thickness, and Composition on the Performance of Mixed Halide Perovskite Single-Junction Solar Cells

Perovskite solar cells have gained significant attention as a promising alternative to traditional photovoltaic technologies due to their remarkable efficiency and cost-effectiveness. This study focuses on optimizing the performance of a ZnO/TiO2/CH3NH3PbI3/Spiro-OMeTAD/GaN perovskite solar cell using Silvaco Atlas simulation software. Key parameters, including absorber layer thickness, electron transport layer (ETL), hole transport layer (HTL), and doping concentrations, were systematically analyzed to evaluate their impact on short-circuit current density (Jsc), open-circuit voltage (Voc), fill factor (FF), and power conversion efficiency (PCE). The results highlight the critical role of the perovskite absorber layer in enhancing device performance, achieving an impressive PCE of 29.27%. Optimal layer thicknesses were identified as 0.1 µm for ZnO, 0.3 µm for TiO2, 0.1 µm for Spiro-OMeTAD, and 3.2 µm for CH3NH3PbI3 on a GaN substrate. These findings provide valuable insights into the design and optimization of perovskite-based solar cells.