Structural properties, polymorphism, and multiscale disorder unravel energy transport limitations in perylene diimide semiconductors

Organic semiconductors continue to make substantial performance gains from photovoltaics to electronics. However, understanding how differences in solid-state structure give rise to large differences in energy transport properties remains unresolved. We report that microcrystals of two perylene diimide (PDI) derivatives differing only in their terminal groups [cyclohexyl (CH) and 4-heptyl (ST)] have exciton diffusion coefficients differing by more than two orders of magnitude. Applying state-of-the-art techniques for microcrystal structure determination, we report the crystal structures of CH-PDI and two polymorphs of ST-PDI. Scanning electron diffraction reveals a range of crystallographic defects in ST-PDI microcrystals, attributed to polymorph intergrowths, while electron energy loss spectroscopy links these defects to nanoscale electronic structure changes. Computational modeling demonstrates that rotational disorder explains the difference in exciton diffusion coefficients. Our observations establish the importance of defect-induced orientational disorder as a source of extrinsic energetic disorder, highlighting the need for defect management in organic semiconductor technologies. Polymorph intergrowths in organic semiconductors are detrimental to exciton diffusion.