InAs/InAlGaAs Quantum Dot Lasers on InP and Si

We report the development of InAs/InAlGaAs quantum-dot (QD) lasers grown on both InP and Si substrates. A modified indium flush technique was employed to control dot-height distribution and tailor the emission wavelength by using a strained partial capping layer. Using this approach, 7-stack InAs/InAlGaAs QD lasers on InP substrates exhibit a low threshold current density (Jth) of 63 A/cm2 per QD layer and high-temperature operation up to 140 °C. Furthermore, electrically pumped InAs/InAlGaAs QD lasers directly grown on Si are also demonstrated, with a low Jth of 1.35 kA/cm2 and a maximum operating temperature of 100 °C. This work highlights the effectiveness of the modified indium flush in achieving high-performance InAs/InAlGaAs QD lasers. These results represent a significant step forward in the development of high-performance C-/L-band QD lasers in the InAs/InAlGaAs/InP material system for Si photonics.