Comparison of different X‐ray‐based scanning electron microscopy methods to detect sub‐nanometre ultra‐thin InAs layers deposited on top of GaAs

We compare three different methods of X-ray analysis in a scanning electron microscope (SEM): energy-dispersive X-ray spectroscopy (EDX), wavelength-dispersive X-ray spectroscopy (WDX) and micro X-ray fluorescence (μXRF). These methods are all applied to the same gallium arsenide (GaAs) wafer with a 0.8 nm layer of indium arsenide (InAs) on top. All methods allow detection and quantification of the indium L-line intensity from the thin InAs layer. EDX is the easiest to perform, WDX is the most sensitive and μXRF a novel technique where a poly-capillary optics is used to focus an X-ray beam from a high-voltage X-ray tube onto a small spot several micrometres wide and the characteristic X-rays produced are detected by a solid-state silicon detector similar to that used in EDX. It is to our knowledge the first time a sub-nanometre layer is reliably detected and analysed using μXRF in an SEM.