Streamlining Accurate 4D-STEM Phase-Orientation Analysis of Polymorphic Polycrystalline Thin Films in Semiconductor TEM Labs for Routine Application

Structural characterization of materials and devices at the nanoscale has become essential in the semiconductor industry, especially as the dimensions of devices are shrinking and the complexity of materials used is increasing. Crystallinity and the distribution of phases in deposited thin films often determine the electrical and mechanical properties of produced devices, which are influenced by their treatment for performance optimization and the increase of the production yield. However, conventional STEM imaging and EDX/EELS mapping techniques cannot provide insight into the internal structural features of analyzed samples. Tescan TENSOR, the new analytical STEM microscope, extends traditional analytical STEM techniques. The system allows for automated precession-enhanced 4D-STEM measurements, making the advanced measurement of sample crystallinity, based on electron diffraction, accessible to a broad range of users. We demonstrate the power of 4D-STEM characterization with an example of aluminum-doped zinc oxide (AZO) thin film phase and orientation analysis for process development and optimization.