GeSn quantum wells as a platform for spin-resolved hole transport

Abstract

The nascent group IV GeSn alloys are highly attractive for spintronics applications, including quantum computing, due to their ability to enable highly scalable fabrication and all-electrical spin manipulation. In this work, we conduct an in-depth study of a two-dimensional hole gas in a Ge/GeSn quantum well, exhibiting the integer quantum Hall effect and distinct Shubnikov-de Haas oscillations. Emphasis is given to the determination of the Landé g-factor and its pronounced anisotropy in this two-dimensional system, revealing values significantly higher than those in conventional Ge or SiGe/Ge systems. Moreover, by modeling the spin-orbit interaction using the Iordanskii-Lyanda-Geller-Pikus theory, crucial cubic Rashba spin-orbit interaction coefficients, are extracted and their significance is highlighted. This work provides the experimental validation of the theoretically predicted enhancements in spin-orbit interaction and g-factors in GeSn alloys compared to Ge. Additionally, it delivers essential parameters for the design of hole spin devices, such as hole qubits, utilizing GeSn-based structures on the Si platform.

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Item Type:	Article
Authors/Creators:	Kaul, P. Karthein, J. Buchhorn, J. Kawano, T. Usubuchi, T. Ishihara, J. Rotaru, N. Del Vecchio, P. Concepcion, O. Ikonic, Z. https://orcid.org/0000-0003-4645-377X Grützmacher, D. Zhao, Q.-T. Moutanabbir, O. Kohda, M. Schäpers, T. Buca, D.
Copyright, Publisher and Additional Information:	© The Author(s) 2025. This article is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License, which permits any non-commercial use, sharing, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if you modified the licensed material. You do not have permission under this licence to share adapted material derived from this article or parts of it. The images or other third party material in this article are included in the article’s Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by-nc-nd/4.0/.
Dates:	Accepted: 28 August 2025 Published (online): 2 October 2025 Published: 2 October 2025
Institution:	The University of Leeds
Academic Units:	The University of Leeds > Faculty of Engineering & Physical Sciences (Leeds) > School of Electronic & Electrical Engineering (Leeds)
Funding Information:	Funder Grant number EU - European Union 10051068
Date Deposited:	09 Oct 2025 08:51
Last Modified:	09 Oct 2025 08:52
Published Version:	https://www.nature.com/articles/s43246-025-00934-9
Status:	Published
Publisher:	Springer Nature
Identification Number:	10.1038/s43246-025-00934-9
Open Archives Initiative ID (OAI ID):	oai:eprints.whiterose.ac.uk:232635

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GeSn quantum wells as a platform for spin-resolved hole transport

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