Capacitance-voltage characterization of GaAsBi/GaAs multiple quantum wells grown by molecular beam epitaxy

Harun, F., Richards, R.D. and David, J.P.R. (2025) Capacitance-voltage characterization of GaAsBi/GaAs multiple quantum wells grown by molecular beam epitaxy. Journal of Physics: Conference Series, 3020. 012008. ISSN 1742-6588

Metadata

Item Type: Article
Authors/Creators:
  • Harun, F.
  • Richards, R.D.
  • David, J.P.R.
Copyright, Publisher and Additional Information:

© 2025 The Authors. This is an Open Access article distributed under the terms of the Creative Commons Attribution Licence (https://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
Dates:
  • Published (online): 1 May 2025
  • Published: 1 May 2025
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Depositing User: Symplectic Sheffield
Date Deposited: 23 Jun 2025 11:52
Last Modified: 23 Jun 2025 11:52
Published Version: https://doi.org/10.1088/1742-6596/3020/1/012008
Status: Published
Publisher: IOP Publishing
Refereed: Yes
Identification Number: 10.1088/1742-6596/3020/1/012008
Open Archives Initiative ID (OAI ID):

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