Evaluation of a hybrid power switch based on trench clustered IGBT and SiC MOSFET

This paper reports performance of a hybrid power switch (HPS) based on parallel arrangement of a 1.2 kV silicon (Si) field stop trench clustered IGBT (FS-TCIGBT) and a 4H-Silicon Carbide (SiC) MOSFET of equivalent rating. The device is aimed to deliver optimum performance over a wide range of load conditions in terms of static and dynamic power losses while maintaining a low cost-to-performance ratio. The HPS can operate in unipolar or bipolar regime depending on load current and operating temperature which enables the device to offer a low on-state losses regardless of load condition. The results show that the HPS effectively combines high current capability of TCIGBT and switching performance of SiC in a single package.