A methodology to characterise the virtual gate effect in a power amplifier

Poluri, N. and De Souza, M.M. orcid.org/0000-0002-7804-7154 (2025) A methodology to characterise the virtual gate effect in a power amplifier. In: 2024 IEEE Microwaves, Antennas, and Propagation Conference (MAPCON) Proceedings. 2024 IEEE Microwaves, Antennas, and Propagation Conference (MAPCON), 09-13 Dec 2024, Hyderabad, India. Institute of Electrical and Electronics Engineers (IEEE). ISBN: 9798350379709.

Abstract

An experimental method to characterize the virtual gate effect in radio-frequency (RF) power amplifiers (PAs) based on high-electron-mobility transistors (HEMTs) is presented. The experimental setup ensures that the GaN device in an amplifier is at the same temperature and trap state every time the experiment is repeated. An algorithm is proposed to estimate multiple trapping time constants simultaneously from measured DC drain current transients of the PA in response to pulsed RF excitation. We observe that the time constants of the device recovery time remain constant over a range of power levels and are related to the shape of the load cycle of the device.

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Item Type:	Proceedings Paper
Authors/Creators:	Poluri, N. De Souza, M.M. https://orcid.org/0000-0002-7804-7154
Copyright, Publisher and Additional Information:	© 2024 The Author(s). Except as otherwise noted, this author-accepted version of a paper published in 2024 IEEE Microwaves, Antennas, and Propagation Conference (MAPCON) Proceedings is made available via the University of Sheffield Research Publications and Copyright Policy under the terms of the Creative Commons Attribution 4.0 International License (CC-BY 4.0), which permits unrestricted use, distribution and reproduction in any medium, provided the original work is properly cited. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/
Keywords:	GaN Power Amplifier characterization; Trapping effect; Virtual Gate Effect
Dates:	Accepted: 2024 Published (online): 20 March 2025 Published: 20 March 2025
Institution:	The University of Sheffield
Academic Units:	The University of Sheffield > Faculty of Engineering (Sheffield) > School of Electrical and Electronic Engineering
Funding Information:	Funder Grant number ENGINEERING AND PHYSICAL SCIENCE RESEARCH COUNCIL EP/X01214X/1
Date Deposited:	15 Jan 2025 10:42
Last Modified:	19 Dec 2025 16:27
Status:	Published
Publisher:	Institute of Electrical and Electronics Engineers (IEEE)
Refereed:	Yes
Identification Number:	10.1109/MAPCON61407.2024.10923157
Related URLs:	Conference
Open Archives Initiative ID (OAI ID):	oai:eprints.whiterose.ac.uk:221354

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A methodology to characterise the virtual gate effect in a power amplifier

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